1998•Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIERequires access
ZnSe-based light emitters grown on wide-gap III-V buffer layers
Petteri Uusimaa, A. Salokatve, Pekka Savolainen, A. Rinta-Möykky, M. Pessa, A. Souifi, R. Adhiri, G. Kiriakidis, K. Moschovis, J. Stoimenos
Open publisher page 2 citations
Abstract
ZnSe-based laser diodes have recently encountered strong competition from those grown from GaN related materials. These two material systems behave in a very different way as far as defect generation and propagation are concerned. For ZnSe-based materials the lifetime of a laser-diode is very sensitive to the density of pre-existing extended defects in the epitaxial material. Therefore, fabrication of a long- lived ZnSe-based laser diode requires an elimination of extended defects as well as making low-resistivity components in order to minimize device heating. We discuss the molecular beam epitaxy growth and characterization of ZnSe-based epitaxial structures on various III-V buffer layers lattice matched to GaAs. The status of our ZnSe-based laser diodes and microcavity LEDs will also be discussed.