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1997•Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIERequires access

Gamma-induced effect of recharging: Ce4+--Ce3+ in Ce3+ and Nd3+ doped YAG crystals

S.M. Kaczmarek, Mirosław Kwaśny, J. Kisielewski, Z. Moroz, A. Matkovskii, D. Sugak

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Abstract

Gamma-induced transition of Ce4+ $ARLR Ce3+ was investigated for Ce,Nd:YAG samples cut off from the same crystal and differing one to another by a few tenth percent of Ce3+ ions concentration (starting concentration). Depending on the starting concentration changes of resulting concentration of Ce3+ ions were observed. The luminescence of Ce,Nd:YAG crystal at about 530 nm increased independently on Ce3+ starting concentration.

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Gamma-induced transition of Ce4+ $ARLR Ce3+ was investigated for Ce,Nd:YAG samples cut off from the same crystal and differing one to another by a few tenth percent of Ce3+ ions concentration (starting concentration). Depending on the starting concentration changes of resulting concentration of Ce3+ ions were observed. The luminescence of Ce,Nd:YAG crystal at about 530 nm increased independently on Ce3+ starting concentration.

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Available abstract

Gamma-induced transition of Ce4+ $ARLR Ce3+ was investigated for Ce,Nd:YAG samples cut off from the same crystal and differing one to another by a few tenth percent of Ce3+ ions concentration (starting concentration). Depending on the starting concentration changes of resulting concentration of Ce3+ ions were observed. The luminescence of Ce,Nd:YAG crystal at about 530 nm increased independently on Ce3+ starting concentration.

Key concepts: Ion, Crystal (programming language), Doping, Luminescence, Analytical Chemistry (journal), Cerium, Materials science, Nuclear chemistry

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Gamma-induced effect of recharging: Ce4+--Ce3+ in Ce3+ and Nd3+ doped YAG crystals — Research Paper | ScholarLens