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2011•AIP conference proceedingsRequires access

Impact of the localized wetting layer states on carrier relaxation processes in GaAs-based quantum dash structures

M. Syperek, Anna Musiał, G. Seęk, P. Podemski, J. Misiewicz, Andreas Löffler, Sven Höfling, L. Worschech, A. Forchel, Jisoon Ihm, Hyeonsik Cheong

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Abstract

The exciton kinetics in the low strain InGaAs/GaAs structures with quantum dashes on a wetting layer has been examined by means of time‐resolved photoluminescence and micro‐photoluminescence. There has been proven a multistage relaxation process with a key role of the exciton localization within the wetting layer revealing also short radiative lifetime of excitons in the dashes as a consequence of a weak carrier confinement. The peculiar properties of the system can be responsible for the observation of pronounced biexciton sideband, which can be related to QDash biexciton interaction with excitons confined in the wetting layer potential fluctuations.

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What this paper is about

The exciton kinetics in the low strain InGaAs/GaAs structures with quantum dashes on a wetting layer has been examined by means of time‐resolved photoluminescence and micro‐photoluminescence. There has been proven a multistage relaxation process with a key role of the exciton localization within the wetting layer revealing also short radiative lifetime of excitons in the dashes as a consequence of a weak carrier confinement. The peculiar properties of the system can be responsible for the observation of pronounced biexciton sideband, which can be related to QDash biexciton interaction with excitons confined in the wetting layer potential fluctuations.

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Available abstract

The exciton kinetics in the low strain InGaAs/GaAs structures with quantum dashes on a wetting layer has been examined by means of time‐resolved photoluminescence and micro‐photoluminescence. There has been proven a multistage relaxation process with a key role of the exciton localization within the wetting layer revealing also short radiative lifetime of excitons in the dashes as a consequence of a weak carrier confinement. The peculiar properties of the system can be responsible for the observation of pronounced biexciton sideband, which can be related to QDash biexciton interaction with excitons confined in the wetting layer potential fluctuations.

Key concepts: Biexciton, Exciton, Wetting layer, Wetting, Photoluminescence, Relaxation (psychology), Materials science, Gallium arsenide

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