Side wall tilt-implanted trench termination for SiC power devices

The trench termination technique is the effective for obtaining a high breakdown voltage while simultaneously minimizing the termination area. In this paper, a tilt-implanted trench termination (TITT) technique for SiC power devices is presented. With this technique, the trench insulator retains all potential energy while maintaining its breakdown voltage. On the basis of simulation results, the TITT area was reduced to 38 µm 2 , a mere 69.7% that of the conventional trench termination structure and 55.1% that of the guard ring structure for the same given breakdown voltage. By setting the trench depth to 11 µm and optimizing the width, we achieved a breakdown voltage of 2750 V.