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2010•Applied Physics LettersRequires access

Large-area InP-based crystalline nanomembrane flexible photodetectors

Weiquan Yang, Hongjun Yang, Guoxuan Qin, Zhenqiang Ma, J. Berggren, Mattias Hammar, Richard Soref, Weidong Zhou

Open publisher page 71 citations

Abstract

Large-area (3×3 mm2) flexible photodetectors were realized, based on crystalline InP semiconductor nanomembranes transferred to flexible polyethylene terephthalate substrates. Very low dark current (a few microamperes) and high responsivity (0.12 A/W) were demonstrated for flexible InP p-i-n photodetectors. Bending characteristics were also investigated for this type of flexible crystalline semiconductor photodetector, and it was found that, whereas the dark current was independent of bending radii, the photocurrent degraded, depending on the bending radii.

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What this paper is about

Large-area (3×3 mm2) flexible photodetectors were realized, based on crystalline InP semiconductor nanomembranes transferred to flexible polyethylene terephthalate substrates. Very low dark current (a few microamperes) and high responsivity (0.12 A/W) were demonstrated for flexible InP p-i-n photodetectors. Bending characteristics were also investigated for this type of flexible crystalline semiconductor photodetector, and it was found that, whereas the dark current was independent of bending radii, the photocurrent degraded, depending on the bending radii.

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Available abstract

Large-area (3×3 mm2) flexible photodetectors were realized, based on crystalline InP semiconductor nanomembranes transferred to flexible polyethylene terephthalate substrates. Very low dark current (a few microamperes) and high responsivity (0.12 A/W) were demonstrated for flexible InP p-i-n photodetectors. Bending characteristics were also investigated for this type of flexible crystalline semiconductor photodetector, and it was found that, whereas the dark current was independent of bending radii, the photocurrent degraded, depending on the bending radii.

Key concepts: Photodetector, Responsivity, Photocurrent, Dark current, Materials science, Optoelectronics, Bending, Polyethylene terephthalate

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