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1999•IEEE International Magnetics ConferenceRequires access

In-situ magnetoresistance measurements of permalloy thin films on GaAs[001]

C. M. Gürtler, Yongbing Xu, J. A. C. Bland

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Abstract

The anisotropic magnetoresistance (AMR) effect is at present the dominant effect used for sensing magnetic fields. For application purposes a linear response to an external magnetic field, a large AMR and a low signal to noise ratio are required.

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What this paper is about

The anisotropic magnetoresistance (AMR) effect is at present the dominant effect used for sensing magnetic fields. For application purposes a linear response to an external magnetic field, a large AMR and a low signal to noise ratio are required.

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Available abstract

The anisotropic magnetoresistance (AMR) effect is at present the dominant effect used for sensing magnetic fields. For application purposes a linear response to an external magnetic field, a large AMR and a low signal to noise ratio are required.

Key concepts: Permalloy, Magnetoresistance, Materials science, Magnetic field, Anisotropy, In situ, Condensed matter physics, Magnetic anisotropy

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In-situ magnetoresistance measurements of permalloy thin films on GaAs[001] — Research Paper | ScholarLens