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2007•Applied Physics LettersRequires access

Electron and hole dynamics of InAs∕GaAs quantum dot semiconductor optical amplifiers

Ian O'Driscoll, Tomasz Piwoński, Carl‐Friedrich Schleussner, John A. Houlihan, Guillaume Huyet, Robert J. Manning

Open publisher page 57 citations

Abstract

Single-color and two-color pump-probe measurements are used to analyze carrier dynamics in InAs∕GaAs quantum dot amplifiers. The study reveals that hole recovery and intradot electron relaxation occur on a picosecond time scale, while the electron capture time is on the order of 10ps. A longer time scale of hundreds of picoseconds is associated with carrier recovery in the wetting layer, similar to that observed in quantum well semiconductor amplifiers.

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What this paper is about

Single-color and two-color pump-probe measurements are used to analyze carrier dynamics in InAs∕GaAs quantum dot amplifiers. The study reveals that hole recovery and intradot electron relaxation occur on a picosecond time scale, while the electron capture time is on the order of 10ps. A longer time scale of hundreds of picoseconds is associated with carrier recovery in the wetting layer, similar to that observed in quantum well semiconductor amplifiers.

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Available abstract

Single-color and two-color pump-probe measurements are used to analyze carrier dynamics in InAs∕GaAs quantum dot amplifiers. The study reveals that hole recovery and intradot electron relaxation occur on a picosecond time scale, while the electron capture time is on the order of 10ps. A longer time scale of hundreds of picoseconds is associated with carrier recovery in the wetting layer, similar to that observed in quantum well semiconductor amplifiers.

Key concepts: Picosecond, Wetting layer, Quantum dot, Semiconductor, Optoelectronics, Relaxation (psychology), Materials science, Electron

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