P‐24: High‐Temperature (250°C) Amorphous‐Silicon TFT's On Clear Plastic Substrates
Ke Long, A.Z. Kattamis, I‐Chun Cheng, Ying X. Gao, H. Glesková, S. Wagner, James C. Sturm
Abstract
Ke Long, A.Z. Kattamis, I‐Chun Cheng, Ying X. Gao, H. Glesková, S. Wagner, James C. Sturm
Abstract
Abstract Amorphous silicon (a‐Si) thin film transistors (TFT's) were fabricated on free‐standing, clear plastic substrates with a maximum process temperature of up to 250°C. An a‐Si TFT backplane for active matrix OLED (AMOLED) application was also made on such substrates. The performance of both the TFT's and the AMOLED backplane are excellent. These results will enable the fabrication of flexible AMLCD or AMOLED displays on clear plastic substrates with the TFT processes currently used for glass substrates.
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Abstract Amorphous silicon (a‐Si) thin film transistors (TFT's) were fabricated on free‐standing, clear plastic substrates with a maximum process temperature of up to 250°C. An a‐Si TFT backplane for active matrix OLED (AMOLED) application was also made on such substrates. The performance of both the TFT's and the AMOLED backplane are excellent. These results will enable the fabrication of flexible AMLCD or AMOLED displays on clear plastic substrates with the TFT processes currently used for glass substrates.
Key concepts: AMOLED, Thin-film transistor, Backplane, Materials science, Active matrix, Amorphous silicon, OLED, Optoelectronics