2005SID Symposium Digest of Technical PapersRequires access

P‐24: High‐Temperature (250°C) Amorphous‐Silicon TFT's On Clear Plastic Substrates

Ke Long, A.Z. Kattamis, I‐Chun Cheng, Ying X. Gao, H. Glesková, S. Wagner, James C. Sturm

Open publisher page 7 citations

Abstract

Abstract Amorphous silicon (a‐Si) thin film transistors (TFT's) were fabricated on free‐standing, clear plastic substrates with a maximum process temperature of up to 250°C. An a‐Si TFT backplane for active matrix OLED (AMOLED) application was also made on such substrates. The performance of both the TFT's and the AMOLED backplane are excellent. These results will enable the fabrication of flexible AMLCD or AMOLED displays on clear plastic substrates with the TFT processes currently used for glass substrates.

About this research paper

What this paper is about

Abstract Amorphous silicon (a‐Si) thin film transistors (TFT's) were fabricated on free‐standing, clear plastic substrates with a maximum process temperature of up to 250°C. An a‐Si TFT backplane for active matrix OLED (AMOLED) application was also made on such substrates. The performance of both the TFT's and the AMOLED backplane are excellent. These results will enable the fabrication of flexible AMLCD or AMOLED displays on clear plastic substrates with the TFT processes currently used for glass substrates.

Why it matters

OpenAlex reports 7 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

Abstract Amorphous silicon (a‐Si) thin film transistors (TFT's) were fabricated on free‐standing, clear plastic substrates with a maximum process temperature of up to 250°C. An a‐Si TFT backplane for active matrix OLED (AMOLED) application was also made on such substrates. The performance of both the TFT's and the AMOLED backplane are excellent. These results will enable the fabrication of flexible AMLCD or AMOLED displays on clear plastic substrates with the TFT processes currently used for glass substrates.

Key concepts: AMOLED, Thin-film transistor, Backplane, Materials science, Active matrix, Amorphous silicon, OLED, Optoelectronics

Related papers

Back to paper searchBrowse research topicsOriginal source
P‐24: High‐Temperature (250°C) Amorphous‐Silicon TFT's On Clear Plastic Substrates — Research Paper | ScholarLens