2004•Japanese Journal of Applied PhysicsRequires access

18.5% Copper Indium Gallium Diselenide (CIGS) Device Using Single-Layer, Chemical-Bath-Deposited ZnS(O,OH)

Raghu N. Bhattacharya, Miguel Á. Contreras, Glenn Teeter

Abstract

The recent development of a chemical-bath-deposited (CBD) ZnS(O,OH) layer that enabled an 18.5%-efficient copper indium gallium diselenide (CIGS) devices using a single-layer of CBD ZnS(O,OH) is reported in this paper. Such buffer layers could potentially replace CdS in the CIGS solar cell.

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Key concepts: Copper indium gallium selenide solar cells, Gallium, Indium, Diselenide, Layer (electronics), Copper, Chemical bath deposition, Materials science