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2014•Unpublished venueRequires access

RP-CVD growth of high carbon content Si1−xCx epilayers using disilane and trimethylsilane precursors

M. Myronov, Stephen Rhead, Gerard Colston, D. R. Leadley

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Abstract

We have demonstrated Si1-xCxepilayers growth by RP-CVD and using Disilane and Trimethylsilane precursors. Very high Carbon content, up to 2.4%, has been obtained. It is close to the best results obtained using more expensive precursors. Use of the RP-CVD is vital from an industrial standpoint as, although MBE offers greater control over growth parameters, the RP-CVD is one of the only viable methods of mass epitaxial growth.

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What this paper is about

We have demonstrated Si1-xCxepilayers growth by RP-CVD and using Disilane and Trimethylsilane precursors. Very high Carbon content, up to 2.4%, has been obtained. It is close to the best results obtained using more expensive precursors. Use of the RP-CVD is vital from an industrial standpoint as, although MBE offers greater control over growth parameters, the RP-CVD is one of the only viable methods of mass epitaxial growth.

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Available abstract

We have demonstrated Si1-xCxepilayers growth by RP-CVD and using Disilane and Trimethylsilane precursors. Very high Carbon content, up to 2.4%, has been obtained. It is close to the best results obtained using more expensive precursors. Use of the RP-CVD is vital from an industrial standpoint as, although MBE offers greater control over growth parameters, the RP-CVD is one of the only viable methods of mass epitaxial growth.

Key concepts: Trimethylsilane, Disilane, Epitaxy, Chemistry, Analytical Chemistry (journal), Materials science, Nanotechnology, Silicon

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RP-CVD growth of high carbon content Si1−xCx epilayers using disilane and trimethylsilane precursors — Research Paper | ScholarLens