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Terahertz rectification by graphene field effect transistors

D. Coquillat, N. Dyakonova, M. Goiran, Miriam S. Vitiello, Leonardo Vicarelli, J.M. Poumirol, Walter Escoffier, Bertrand Raquet, Dmytro B. But, F. Teppe, V. Pellegrini, Alessandro Tredicucci, W. Knap

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Abstract

We demonstrate two different Terahertz (THz) rectification mechanisms by graphene field effect transistors: 1) a standard rectification mechanism where THz radiation modulates simultaneously the carrier density and the carrier velocity, and 2) a mesoscopic rectification due to the existence of the nonlinearity associated to the quantum interference effects.

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What this paper is about

We demonstrate two different Terahertz (THz) rectification mechanisms by graphene field effect transistors: 1) a standard rectification mechanism where THz radiation modulates simultaneously the carrier density and the carrier velocity, and 2) a mesoscopic rectification due to the existence of the nonlinearity associated to the quantum interference effects.

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Available abstract

We demonstrate two different Terahertz (THz) rectification mechanisms by graphene field effect transistors: 1) a standard rectification mechanism where THz radiation modulates simultaneously the carrier density and the carrier velocity, and 2) a mesoscopic rectification due to the existence of the nonlinearity associated to the quantum interference effects.

Key concepts: Rectification, Terahertz radiation, Optical rectification, Mesoscopic physics, Graphene, Optoelectronics, Transistor, Field-effect transistor

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