2007•Applied Physics LettersOpen access

CuTCNQ resistive nonvolatile memories with a noble metal bottom electrode

R. Müller, Rik Naulaerts, Joris Billen, Jan Genoe, Paul L. Heremans

Abstract

Resistive electrical switching of the organic semiconductor Cu-tetracyanoquinodimethane (CuTCNQ) was investigated between gold bottom and aluminum top contacts. Corresponding Au∕CuTCNQ∕Al crossbar memories achieved several thousand write/erase cycles. The switching process was further studied by current-time measurements, and temperature-dependent measurements of the on state conductivity.

Open-access reader

About this research paper

What this paper is about

Why it matters

OpenAlex reports 48 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

Key concepts: Tetracyanoquinodimethane, Materials science, Resistive touchscreen, Electrode, Noble metal, Semiconductor, Electrical resistivity and conductivity, Optoelectronics