2000•Japanese Journal of Applied PhysicsOpen access

Slip-Free Rapid Thermal Processing in Single Wafer Furnace

Woo Sik Yoo, Takashi Fukada, Hirofumi Kitayama, Nobuaki Takahashi, Keiichi Enjoji, Kiyoshi Sunohara

Abstract

Defect generation phenomena in Si wafers during atmospheric pressure rapid thermal processing (RTP) in a single wafer furnace (SWF) are investigated as a function of temperature, process time, wafer handling method and speed. The size, shape and spatial distribution of crystal defects generated during RTP were characterized using an optical microscope and X-ray topography. The wafer handling method and speed are found to be very important in controlling defect generation during RTP under given process conditions. Highly reproducible slip-free RTP results were achieved in 200-mm-diameter Si wafers processed at 1100°C for 60 s (up to 5 times) by optimizing the wafer handling method and speed.

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Key concepts: Wafer, Rapid thermal processing, Materials science, Thermal, Slip (aerodynamics), Optoelectronics, Engineering, Aerospace engineering