2011•Physical Review BOpen access

Magnetoresistance in a high-mobility two-dimensional electron gas

L. Bockhorn, P. Barthold, D. Schuh, W. Wegscheider, R. J. Haug

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Abstract

In a high-mobility two-dimensional electron gas (2DEG) in a GaAs/Al${}_{0.3}$Ga${}_{0.7}$As quantum well we observe a strong magnetoresistance. In lowering the electron density, the magnetoresistance gets more pronounced and reaches values of more than 300$%$. We observe that the huge magnetoresistance vanishes when increasing the temperature. An additional density-dependent factor is introduced to be able to fit the parabolic magnetoresistance to the electron-electron interaction correction.

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In a high-mobility two-dimensional electron gas (2DEG) in a GaAs/Al${}_{0.3}$Ga${}_{0.7}$As quantum well we observe a strong magnetoresistance. In lowering the electron density, the magnetoresistance gets more pronounced and reaches values of more than 300$%$. We observe that the huge magnetoresistance vanishes when increasing the temperature. An additional density-dependent factor is introduced to be able to fit the parabolic magnetoresistance to the electron-electron interaction correction.

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Available abstract

In a high-mobility two-dimensional electron gas (2DEG) in a GaAs/Al${}_{0.3}$Ga${}_{0.7}$As quantum well we observe a strong magnetoresistance. In lowering the electron density, the magnetoresistance gets more pronounced and reaches values of more than 300$%$. We observe that the huge magnetoresistance vanishes when increasing the temperature. An additional density-dependent factor is introduced to be able to fit the parabolic magnetoresistance to the electron-electron interaction correction.

Key concepts: Magnetoresistance, Electron, Condensed matter physics, Fermi gas, Materials science, Physics, Magnetic field, Quantum mechanics

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