Magnetoresistance in a high-mobility two-dimensional electron gas
L. Bockhorn, P. Barthold, D. Schuh, W. Wegscheider, R. J. Haug
Abstract
Open-access reader
L. Bockhorn, P. Barthold, D. Schuh, W. Wegscheider, R. J. Haug
Abstract
Open-access reader
In a high-mobility two-dimensional electron gas (2DEG) in a GaAs/Al${}_{0.3}$Ga${}_{0.7}$As quantum well we observe a strong magnetoresistance. In lowering the electron density, the magnetoresistance gets more pronounced and reaches values of more than 300$%$. We observe that the huge magnetoresistance vanishes when increasing the temperature. An additional density-dependent factor is introduced to be able to fit the parabolic magnetoresistance to the electron-electron interaction correction.
OpenAlex reports 97 citations for this work. Citation counts describe recorded attention and do not establish research quality.
A contribution statement is not available in the OpenAlex record.
Method details are not available in the OpenAlex metadata.
Findings are not separately available in the OpenAlex metadata.
Limitations are not available in the OpenAlex metadata.
Application details are not available in the OpenAlex metadata.
In a high-mobility two-dimensional electron gas (2DEG) in a GaAs/Al${}_{0.3}$Ga${}_{0.7}$As quantum well we observe a strong magnetoresistance. In lowering the electron density, the magnetoresistance gets more pronounced and reaches values of more than 300$%$. We observe that the huge magnetoresistance vanishes when increasing the temperature. An additional density-dependent factor is introduced to be able to fit the parabolic magnetoresistance to the electron-electron interaction correction.
Key concepts: Magnetoresistance, Electron, Condensed matter physics, Fermi gas, Materials science, Physics, Magnetic field, Quantum mechanics