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2010•Modern Physics Letters BRequires access

A REFINED BCS APPROACH TO THE DOPING DEPENDENCE OF T c IN HIGH-T c SUPERCONDUCTORS

J. Maćkowiak, Dawid Borycki

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Abstract

The presence of dopant ions in a high-temperature superconductor (HTSC) is accounted for by introducing an effective temperature [Formula: see text] of current carriers. It is shown that the BCS formalism, with a power law for the bandwidth and state density dependence on dopant concentration x and a [Formula: see text] temperature scale, yields a closed formula for T c (x), which, in several cases, agrees well with experimental data on T c (x) of HTSCs.

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The presence of dopant ions in a high-temperature superconductor (HTSC) is accounted for by introducing an effective temperature [Formula: see text] of current carriers. It is shown that the BCS formalism, with a power law for the bandwidth and state density dependence on dopant concentration x and a [Formula: see text] temperature scale, yields a closed formula for T c (x), which, in several cases, agrees well with experimental data on T c (x) of HTSCs.

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Available abstract

The presence of dopant ions in a high-temperature superconductor (HTSC) is accounted for by introducing an effective temperature [Formula: see text] of current carriers. It is shown that the BCS formalism, with a power law for the bandwidth and state density dependence on dopant concentration x and a [Formula: see text] temperature scale, yields a closed formula for T c (x), which, in several cases, agrees well with experimental data on T c (x) of HTSCs.

Key concepts: Formalism (music), Dopant, Font, Doping, Superconductivity, Condensed matter physics, Physics, High-temperature superconductivity

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