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2012•IEEE Photonics Technology LettersRequires access

Efficiency Enhancement of Blue InGaN Light-Emitting Diodes With Shallow First Well

Tsun-Hsin Wang, Yen‐Kuang Kuo

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Abstract

Efficiency enhancement of blue InGaN/GaN light-emitting diodes (LEDs) with shallow first well is investigated. Energy band diagrams, carrier concentrations in quantum wells, spontaneous emission spectra, light-current-voltage performance curves, and internal quantum efficiency are studied. Simulation results show that the LED is markedly improved when regular first well is replaced by shallow first well due to reduced polarization field and thereby enhanced injection efficiency of carriers in quantum wells. The proposed structure is beneficial for the blue InGaN LED even at a high level of current injection.

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What this paper is about

Efficiency enhancement of blue InGaN/GaN light-emitting diodes (LEDs) with shallow first well is investigated. Energy band diagrams, carrier concentrations in quantum wells, spontaneous emission spectra, light-current-voltage performance curves, and internal quantum efficiency are studied. Simulation results show that the LED is markedly improved when regular first well is replaced by shallow first well due to reduced polarization field and thereby enhanced injection efficiency of carriers in quantum wells. The proposed structure is beneficial for the blue InGaN LED even at a high level of current injection.

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Available abstract

Efficiency enhancement of blue InGaN/GaN light-emitting diodes (LEDs) with shallow first well is investigated. Energy band diagrams, carrier concentrations in quantum wells, spontaneous emission spectra, light-current-voltage performance curves, and internal quantum efficiency are studied. Simulation results show that the LED is markedly improved when regular first well is replaced by shallow first well due to reduced polarization field and thereby enhanced injection efficiency of carriers in quantum wells. The proposed structure is beneficial for the blue InGaN LED even at a high level of current injection.

Key concepts: Light-emitting diode, Optoelectronics, Materials science, Diode, Quantum well, Quantum efficiency, Blueshift, Wide-bandgap semiconductor

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