2007The Journal of The Institute of Image Information and Television EngineersOpen access

An Over 200-dB Dynamic Range CMOS Image Sensor Combining a Lateral Overflow Integration with Photo-Current Readout Operation

Nana Akabane, Noriko Ide, Satoru Adachi, Koichi Mizobuchi, Shigetoshi Sugawa

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Abstract

A wide dynamic range 64x64 CMOS image sensor with 20x20um 2 pixel that combines a lateral-overflow integration voltage-readout operation with the current readout operation from the buried photo-diode hasbeen developed.In the voltage readout operation,an over 160-dB dynamic range image with a linear response isobtained from sequential electronic shutter operations from 1/30 s to 1/130 ks with a dynamic range of about 100-dB within a light intensity range from about 10 -2lx to 106lx.In addition,an over 200-dB dynamic range perform-ance of up to 108lx or more with few time exposures in the high illuminance region is made possible by combiningit with the current reading operation.More than 40 dB for all noises,including photon shot noise,occurs around all the switching points.

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A wide dynamic range 64x64 CMOS image sensor with 20x20um 2 pixel that combines a lateral-overflow integration voltage-readout operation with the current readout operation from the buried photo-diode hasbeen developed.In the voltage readout operation,an over 160-dB dynamic range image with a linear response isobtained from sequential electronic shutter operations from 1/30 s to 1/130 ks with a dynamic range of about 100-dB within a light intensity range from about 10 -2lx to 106lx.In addition,an over 200-dB dynamic range perform-ance of up to 108lx or more with few time exposures in the high illuminance region is made possible by combiningit with the current reading operation.More than 40 dB for all noises,including photon shot noise,occurs around all the switching points.

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Available abstract

A wide dynamic range 64x64 CMOS image sensor with 20x20um 2 pixel that combines a lateral-overflow integration voltage-readout operation with the current readout operation from the buried photo-diode hasbeen developed.In the voltage readout operation,an over 160-dB dynamic range image with a linear response isobtained from sequential electronic shutter operations from 1/30 s to 1/130 ks with a dynamic range of about 100-dB within a light intensity range from about 10 -2lx to 106lx.In addition,an over 200-dB dynamic range perform-ance of up to 108lx or more with few time exposures in the high illuminance region is made possible by combiningit with the current reading operation.More than 40 dB for all noises,including photon shot noise,occurs around all the switching points.

Key concepts: Dynamic range, Wide dynamic range, High dynamic range, Shutter, Image sensor, CMOS, Illuminance, Voltage

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