F.S. Chen, F. Bosch
Abstract
A high-speed laser-driver IC has been fabricated using etched-gate enhancement/depletion-mode MESFET technology. It has been demonstrated that the device is capable of driving 25Ω load with 80 mA modulation current at up to 4 Gbit/s NRZ data rate.
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A high-speed laser-driver IC has been fabricated using etched-gate enhancement/depletion-mode MESFET technology. It has been demonstrated that the device is capable of driving 25Ω load with 80 mA modulation current at up to 4 Gbit/s NRZ data rate.
Key concepts: MESFET, Gigabit, Materials science, Optoelectronics, Modulation (music), Laser, Gallium arsenide, Electronic engineering