2007•Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIERequires access
Inductively coupled plasma etching of ZnO
Karen J. Nordheden, Mark Dineen, Colin Welch
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Abstract
The etching characteristics of ZnO epitaxial layers in Oxford Plasmalab 100 ICP 180 and 380 systems are investigated. Etch rates are studied as a function of gas composition, ICP power and RF bias power. Surface profilometry and scanning electron microscopy are used to characterize etch rates and surface morphologies. Highlights from other recently published results are also discussed.