ScholarLens Back to search
2010•Progress in Photovoltaics Research and ApplicationsOpen access

ZnO nanorod arrays as an antireflective coating for Cu(In,Ga)Se2 thin film solar cells

Lorenz Aé, D. Kieven, J. Chen, R. Klenk, T. Rissom, Yang Tang, M. Lux‐Steiner

Open full text 66 citations

Abstract

Abstract A ZnO nanorod antireflective coating has been prepared on Cu(In,Ga)Se2 thin film solar cells. This coating leads to a decrease of the weighted global reflectance of the solar cells from 8.6 to 3.5%. It boosts the solar cells short‐circuit current up to 5.7% without significant effect on their open‐circuit voltage and fill factor (FF), which is comparable to a conventional optimized single layer MgF2 antireflective coating. The ZnO nanorod antireflective coating was electrochemically prepared from an aqueous solution at 80°C. The antireflective capability of ZnO nanorod arrays (ZNAs) may be further improved by optimization of growth conditions and their geometry. Copyright © 2010 John Wiley & Sons, Ltd.

Open-access reader

About this research paper

What this paper is about

Abstract A ZnO nanorod antireflective coating has been prepared on Cu(In,Ga)Se2 thin film solar cells. This coating leads to a decrease of the weighted global reflectance of the solar cells from 8.6 to 3.5%. It boosts the solar cells short‐circuit current up to 5.7% without significant effect on their open‐circuit voltage and fill factor (FF), which is comparable to a conventional optimized single layer MgF2 antireflective coating. The ZnO nanorod antireflective coating was electrochemically prepared from an aqueous solution at 80°C. The antireflective capability of ZnO nanorod arrays (ZNAs) may be further improved by optimization of growth conditions and their geometry. Copyright © 2010 John Wiley & Sons, Ltd.

Why it matters

OpenAlex reports 66 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

Abstract A ZnO nanorod antireflective coating has been prepared on Cu(In,Ga)Se2 thin film solar cells. This coating leads to a decrease of the weighted global reflectance of the solar cells from 8.6 to 3.5%. It boosts the solar cells short‐circuit current up to 5.7% without significant effect on their open‐circuit voltage and fill factor (FF), which is comparable to a conventional optimized single layer MgF2 antireflective coating. The ZnO nanorod antireflective coating was electrochemically prepared from an aqueous solution at 80°C. The antireflective capability of ZnO nanorod arrays (ZNAs) may be further improved by optimization of growth conditions and their geometry. Copyright © 2010 John Wiley & Sons, Ltd.

Key concepts: Anti-reflective coating, Nanorod, Materials science, Coating, Open-circuit voltage, Solar cell, Layer (electronics), Optoelectronics

Related papers

Related paper 1Related paper 2Related paper 3
Back to paper searchBrowse research topicsOriginal source
ZnO nanorod arrays as an antireflective coating for Cu(In,Ga)Se2 thin film solar cells — Research Paper | ScholarLens