Nanohenry inductance measurement using a low parasitic‐inductance probe

Abstract The increased speeds of logic circuitry make the electrical characteristics of LSI packages more important. This is especially true of inductance, which is the main source of simultaneous switching noise (SSN). To improve the accuracy of SSN simulations, inductance models of LSI packages should be represented by inductance matrices; and, thus, to construct precise models, it is necessary to have an inductance measurement method. A new inductance measurement method of nanohenry‐order accuracy is proposed that uses an LCR‐meter. Since the parasitic inductance of measurement probes usually decreases accuracy, a special probe with minimized parasitic inductance was developed. The new measurement method has the additional advantage of high spatial resolution. The results of measurements proved to be in good agreement with calculations.