1989Electronics LettersRequires access

Electrical studies of tellurium films

Ryan Z. Swan, A. K. Ray, C. A. Hogarth, Debashis Mukherjee

Open publisher page 4 citations

Abstract

In situ DC measurements made on 50nm-thick tellurium films sandwiched between copper electrodes show an existence of ohmic contacts at the metal/semiconductor interface. Conduction in the polycrystalline film at higher fields is believed to be due to space-charge-limited current flow.

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What this paper is about

In situ DC measurements made on 50nm-thick tellurium films sandwiched between copper electrodes show an existence of ohmic contacts at the metal/semiconductor interface. Conduction in the polycrystalline film at higher fields is believed to be due to space-charge-limited current flow.

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OpenAlex reports 4 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

In situ DC measurements made on 50nm-thick tellurium films sandwiched between copper electrodes show an existence of ohmic contacts at the metal/semiconductor interface. Conduction in the polycrystalline film at higher fields is believed to be due to space-charge-limited current flow.

Key concepts: Tellurium, Ohmic contact, Materials science, Semiconductor, Copper, Space charge, Optoelectronics, Metal

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