Electrical studies of tellurium films
Ryan Z. Swan, A. K. Ray, C. A. Hogarth, Debashis Mukherjee
Abstract
Ryan Z. Swan, A. K. Ray, C. A. Hogarth, Debashis Mukherjee
Abstract
In situ DC measurements made on 50nm-thick tellurium films sandwiched between copper electrodes show an existence of ohmic contacts at the metal/semiconductor interface. Conduction in the polycrystalline film at higher fields is believed to be due to space-charge-limited current flow.
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In situ DC measurements made on 50nm-thick tellurium films sandwiched between copper electrodes show an existence of ohmic contacts at the metal/semiconductor interface. Conduction in the polycrystalline film at higher fields is believed to be due to space-charge-limited current flow.
Key concepts: Tellurium, Ohmic contact, Materials science, Semiconductor, Copper, Space charge, Optoelectronics, Metal