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2006•Applied Physics LettersRequires access

Next generation of oxide photonic devices: ZnO-based ultraviolet light emitting diodes

Yungryel Ryu, Tae-Seok Lee, Jorge A. Lubguban, H. W. White, Bongjin Kim, Yoon‐Soo Park, C. J. Youn

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Abstract

Results are presented for ZnO-based ultraviolet light emitting diodes (LEDs) that employ a BeZnO∕ZnO active layer comprised of seven quantum wells. Arsenic and gallium are used for p-type and n-type layers. The ZnO-based LEDs show two dominant electroluminescence peaks located in the ultraviolet spectral region between 360 and 390nm, as well as a broad peak at 550nm.

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What this paper is about

Results are presented for ZnO-based ultraviolet light emitting diodes (LEDs) that employ a BeZnO∕ZnO active layer comprised of seven quantum wells. Arsenic and gallium are used for p-type and n-type layers. The ZnO-based LEDs show two dominant electroluminescence peaks located in the ultraviolet spectral region between 360 and 390nm, as well as a broad peak at 550nm.

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Available abstract

Results are presented for ZnO-based ultraviolet light emitting diodes (LEDs) that employ a BeZnO∕ZnO active layer comprised of seven quantum wells. Arsenic and gallium are used for p-type and n-type layers. The ZnO-based LEDs show two dominant electroluminescence peaks located in the ultraviolet spectral region between 360 and 390nm, as well as a broad peak at 550nm.

Key concepts: Optoelectronics, Light-emitting diode, Ultraviolet, Electroluminescence, Materials science, Diode, Wide-bandgap semiconductor, Quantum well

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