1994•Semiconductor Science and TechnologyOpen access

Dependence of resonant electron and hole tunnelling times between quantum wells on barrier thickness

Albert P. Heberle, X. Q. Zhou, Atsushi Tackeuchi, W. W. Rühle, Klaus Köhler

Abstract

We investigated resonant tunnelling of electrons and holes between coupled quantum wells using time-resolved luminescence spectroscopy. Exponential dependence of tunnelling times on barrier width is observed for electrons but not for holes. The tunnelling times of electrons are correctly described by a model which takes into account inhomogeneous broadening.

Open-access reader

About this research paper

What this paper is about

Why it matters

OpenAlex reports 29 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

Key concepts: Quantum tunnelling, Electron, Quantum well, Condensed matter physics, Rectangular potential barrier, Tunnel effect, Atomic physics, Chemistry