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1987•Japanese Journal of Applied PhysicsOpen access

Determination of Hydrogen Concentration in PCVD Silicon Nitride Films by Elastic Recoil Detection Analysis

Mitsutoshi Takahashi, Masahiko Maeda, Yutaka Sakakibara

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Abstract

The hydrogen concentrations of PCVD silicon nitride films were measured by Elastic Recoil Detection (ERD) analysis using 2.5 MeV He+ ions. For annealed films, H concentrations measured by ERD analysis are smaller than those measured by an infrared absorption analysis. These results indicate that absorption cross sections of Si-hydrogen and N-hydrogen bonds are changed by annealing.

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The hydrogen concentrations of PCVD silicon nitride films were measured by Elastic Recoil Detection (ERD) analysis using 2.5 MeV He+ ions. For annealed films, H concentrations measured by ERD analysis are smaller than those measured by an infrared absorption analysis. These results indicate that absorption cross sections of Si-hydrogen and N-hydrogen bonds are changed by annealing.

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Available abstract

The hydrogen concentrations of PCVD silicon nitride films were measured by Elastic Recoil Detection (ERD) analysis using 2.5 MeV He+ ions. For annealed films, H concentrations measured by ERD analysis are smaller than those measured by an infrared absorption analysis. These results indicate that absorption cross sections of Si-hydrogen and N-hydrogen bonds are changed by annealing.

Key concepts: Elastic recoil detection, Silicon nitride, Hydrogen, Annealing (glass), Analytical Chemistry (journal), Silicon, Nitride, Recoil

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