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2006•Unpublished venueRequires access

Microwave FET Oscillator Design Based on Large-Signal Characterisation

Christopher Maxwell Snowden, Michael J Howes, David Vernon Morgan

Open publisher page 2 citations

Abstract

A method of accurately designing microwave FET oscillators using a two terminal large-signal characterisation technique is described. Measurements are used to characterise a one-port microwave oscillator circuit in terms of admittance, frequency and signal level, with the FET embedded in a feedback network. Device surfaces are used in the optimal design of low noise FET oscillators. The technique is applied to several microstrip MESFET oscillator circuits.

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What this paper is about

A method of accurately designing microwave FET oscillators using a two terminal large-signal characterisation technique is described. Measurements are used to characterise a one-port microwave oscillator circuit in terms of admittance, frequency and signal level, with the FET embedded in a feedback network. Device surfaces are used in the optimal design of low noise FET oscillators. The technique is applied to several microstrip MESFET oscillator circuits.

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OpenAlex reports 2 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

A method of accurately designing microwave FET oscillators using a two terminal large-signal characterisation technique is described. Measurements are used to characterise a one-port microwave oscillator circuit in terms of admittance, frequency and signal level, with the FET embedded in a feedback network. Device surfaces are used in the optimal design of low noise FET oscillators. The technique is applied to several microstrip MESFET oscillator circuits.

Key concepts: MESFET, Microstrip, Microwave, Admittance, Admittance parameters, Electronic engineering, SIGNAL (programming language), Microwave engineering

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