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2004•Applied Physics LettersRequires access

Carbon nanotube transistor optimization by chemical control of the nanotube–metal interface

Stéphane Auvray, Julien Borghetti, M. F. Goffman, Arianna Filoramo, Vincent Derycke, J.‐P. Bourgoin, O. Jost

Open publisher page 38 citations

Abstract

Most carbon nanotube transistors work as Schottky barrier transistors. We show that chemical treatment of operational p-type nanotube transistors by trifluoro-acetic acid (TFA) leads to the drastic improvement of all the key device parameters. This effect is due to the highly polar nature of the TFA molecule which, once adsorbed at the metal–nanotube interface, lowers the Schottky barrier for the holes and thus favors their injection.

About this research paper

What this paper is about

Most carbon nanotube transistors work as Schottky barrier transistors. We show that chemical treatment of operational p-type nanotube transistors by trifluoro-acetic acid (TFA) leads to the drastic improvement of all the key device parameters. This effect is due to the highly polar nature of the TFA molecule which, once adsorbed at the metal–nanotube interface, lowers the Schottky barrier for the holes and thus favors their injection.

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OpenAlex reports 38 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

Most carbon nanotube transistors work as Schottky barrier transistors. We show that chemical treatment of operational p-type nanotube transistors by trifluoro-acetic acid (TFA) leads to the drastic improvement of all the key device parameters. This effect is due to the highly polar nature of the TFA molecule which, once adsorbed at the metal–nanotube interface, lowers the Schottky barrier for the holes and thus favors their injection.

Key concepts: Nanotube, Carbon nanotube, Schottky barrier, Carbon nanotube field-effect transistor, Materials science, Carbon nanotube quantum dot, Transistor, Nanotechnology

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