A systematic approach to the measurement of ideality factor, series resistance, and barrier height for Schottky diodes
T. C. Lee, S. Fung, C. D. Beling, H. L. Au
Abstract
T. C. Lee, S. Fung, C. D. Beling, H. L. Au
Abstract
A nongraphical approach is proposed for measuring and evaluating the ideality n factor and the series resistance of a Schottky diode. The approach involves the use of an auxiliary function and a computer-fitting routine. This technique has been found to be both accurate and reliable. The validity of this has also been confirmed by way of I-V measurements using both commercially available and laboratory-prepared Schottky diodes.
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A nongraphical approach is proposed for measuring and evaluating the ideality n factor and the series resistance of a Schottky diode. The approach involves the use of an auxiliary function and a computer-fitting routine. This technique has been found to be both accurate and reliable. The validity of this has also been confirmed by way of I-V measurements using both commercially available and laboratory-prepared Schottky diodes.
Key concepts: Schottky diode, Equivalent series resistance, Diode, Schottky barrier, Series (stratigraphy), Optoelectronics, Metal–semiconductor junction, Materials science