2010Unpublished venueRequires access

Impact of onpolar plane for deep ultraviolet laser diodes based on AlGa/AlN quantum wells

Kazunobu Kojima, Atsushi Yamaguchi, Mitsuru Funato, Yoichi Kawakami, Susumu Noda

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Abstract

Band structures and optical gain of nonpolar AlGaN/AlN quantum wells were investigated. It was found that nonpolar quantum wells drastically improved optical gain and anisotropy compared to those of c-plane quantum wells.

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What this paper is about

Band structures and optical gain of nonpolar AlGaN/AlN quantum wells were investigated. It was found that nonpolar quantum wells drastically improved optical gain and anisotropy compared to those of c-plane quantum wells.

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OpenAlex reports 2 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

Band structures and optical gain of nonpolar AlGaN/AlN quantum wells were investigated. It was found that nonpolar quantum wells drastically improved optical gain and anisotropy compared to those of c-plane quantum wells.

Key concepts: Quantum well, Optoelectronics, Ultraviolet, Laser, Materials science, Anisotropy, Diode, Optical anisotropy

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