2007•MRS ProceedingsRequires access

Effect of Implantation Dose and Annealing Time on the Formation of Si Nanocrystals Embedded in Thermal Oxide

Cong Qian, Zhengxuan Zhang, Feng Zhang, Cheng-lu Lin

Open publisher page 2 citations

Abstract

This record does not include an abstract. Use the full-text link above if available.

About this research paper

What this paper is about

An abstract is not available in the OpenAlex record for this paper.

Why it matters

OpenAlex reports 2 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Key concepts: Nanocrystal, X-ray photoelectron spectroscopy, Annealing (glass), Materials science, Photoluminescence, Oxide, Ion implantation, Thermal treatment

Back to paper search Browse research topics Original source

Effect of Implantation Dose and Annealing Time on the Formation of Si Nanocrystals Embedded in Thermal Oxide — Research Paper | ScholarLens