The thermal-field emission model for carrier injection characteristics of an organic field effect transistor
Yasuo Kimura, Tomohisa Oba, Naoko Shimakura, Michio Niwano
Abstract
Yasuo Kimura, Tomohisa Oba, Naoko Shimakura, Michio Niwano
Abstract
We have investigated the influence of carrier injection on the characteristics of an organic field effect transistor (OFET) using a rubrene single crystal. The mobility estimated from the transfer characteristic of the OFET depended strongly on the channel length and the thickness of the rubrene single crystal although the mobility is intrinsically independent of the dimensions of an OFET. On the other hand, the temperature dependence of the saturation drain current was in good agreement with the thermal-field emission theory. These suggest that OFETs are controlled not only by the carrier accumulation at the channel but also by the carrier injection.
OpenAlex reports 3 citations for this work. Citation counts describe recorded attention and do not establish research quality.
A contribution statement is not available in the OpenAlex record.
Method details are not available in the OpenAlex metadata.
Findings are not separately available in the OpenAlex metadata.
Limitations are not available in the OpenAlex metadata.
Application details are not available in the OpenAlex metadata.
We have investigated the influence of carrier injection on the characteristics of an organic field effect transistor (OFET) using a rubrene single crystal. The mobility estimated from the transfer characteristic of the OFET depended strongly on the channel length and the thickness of the rubrene single crystal although the mobility is intrinsically independent of the dimensions of an OFET. On the other hand, the temperature dependence of the saturation drain current was in good agreement with the thermal-field emission theory. These suggest that OFETs are controlled not only by the carrier accumulation at the channel but also by the carrier injection.
Key concepts: Rubrene, Organic field-effect transistor, Materials science, Field-effect transistor, Saturation (graph theory), Electron mobility, Organic semiconductor, Optoelectronics