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2015•IEEE Transactions on Electron DevicesRequires access

A SPICE Compact Model for Unipolar RRAM Reset Process Analysis

F. Jiménez-Molinos, Marco Antonio Villena, J.B. Roldán, A. Roldán

Open publisher page 48 citations

Abstract

A physically based circuit model is proposed for SPICE simulation of thermally assisted reset transitions in resistive switching devices. The model allows the simulation of conductive filaments with complex structures, such as a main filament with several subfilaments attached forming a tree structure, or several filaments interlaced between them. The model has been validated by comparing with experimental data and the simulations obtained with a previously published simulation tool. A study of the influence of different subfilaments configurations on the variability of resistive random access memory I-V reset curves is also presented.

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What this paper is about

A physically based circuit model is proposed for SPICE simulation of thermally assisted reset transitions in resistive switching devices. The model allows the simulation of conductive filaments with complex structures, such as a main filament with several subfilaments attached forming a tree structure, or several filaments interlaced between them. The model has been validated by comparing with experimental data and the simulations obtained with a previously published simulation tool. A study of the influence of different subfilaments configurations on the variability of resistive random access memory I-V reset curves is also presented.

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OpenAlex reports 48 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

A physically based circuit model is proposed for SPICE simulation of thermally assisted reset transitions in resistive switching devices. The model allows the simulation of conductive filaments with complex structures, such as a main filament with several subfilaments attached forming a tree structure, or several filaments interlaced between them. The model has been validated by comparing with experimental data and the simulations obtained with a previously published simulation tool. A study of the influence of different subfilaments configurations on the variability of resistive random access memory I-V reset curves is also presented.

Key concepts: Spice, Resistive random-access memory, Reset (finance), Process (computing), Protein filament, Resistive touchscreen, Electronic engineering, Computer science

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