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On the stability of twins during vacuum annealing of ZnSe films grown by molecular beam epitaxy

S.B. Sant, Richard W. Smith, George C. Weatherly

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Abstract

ZnSe films grown on (100) Ge substrates by molecular beam epitaxy (MBE) contain a high density of defects such as twins and, in some instances, low-angle boundaries. In situ transmission electron microscopy (TEM) annealing and bulk vacuum annealing studies have been made on as-grown ZnSe/(100)Ge specimens. For both kinds of annealing, the twins were found to be very stable during heating–cooling cycles.

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ZnSe films grown on (100) Ge substrates by molecular beam epitaxy (MBE) contain a high density of defects such as twins and, in some instances, low-angle boundaries. In situ transmission electron microscopy (TEM) annealing and bulk vacuum annealing studies have been made on as-grown ZnSe/(100)Ge specimens. For both kinds of annealing, the twins were found to be very stable during heating–cooling cycles.

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Available abstract

ZnSe films grown on (100) Ge substrates by molecular beam epitaxy (MBE) contain a high density of defects such as twins and, in some instances, low-angle boundaries. In situ transmission electron microscopy (TEM) annealing and bulk vacuum annealing studies have been made on as-grown ZnSe/(100)Ge specimens. For both kinds of annealing, the twins were found to be very stable during heating–cooling cycles.

Key concepts: Molecular beam epitaxy, Annealing (glass), Transmission electron microscopy, Materials science, Epitaxy, Ultra-high vacuum, Crystallography, Optoelectronics

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