2009•Journal of Crystal GrowthRequires access

Growth of GaN single crystals with extremely low dislocation density by two-step dislocation reduction

Fumio Kawamura, Masaki Tanpo, Naoya Miyoshi, Mamoru Imade, Masashi Yoshimura, Yusuke Mori, Yasuo Kitaoka, Takatomo Sasaki

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Key concepts: Dislocation, Materials science, Reduction (mathematics), Dislocation creep, Single crystal, Crystal (programming language), Peierls stress, Crystallography

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Growth of GaN single crystals with extremely low dislocation density by two-step dislocation reduction — Research Paper | ScholarLens