2012•Journal of Crystal GrowthRequires access

Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si(001) and Ge(001) substrates: II—Transmission electron microscopy and atomic force microscopy

Nikolai N. Faleev, Nathan Sustersic, Nupur Bhargava, James S. Kolodzey, Sergej N. Magonov, David John Smith, Christiana B. Honsberg

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Key concepts: Epitaxy, Molecular beam epitaxy, Transmission electron microscopy, Materials science, Electron diffraction, Crystallography, Optoelectronics, Characterization (materials science)

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Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si(001) and Ge(001) substrates: II—Transmission electron microscopy and atomic force microscopy — Research Paper | ScholarLens