Dependence of Si Nanocrystals Photoluminescence Quenching by Ion Irradiation on Ion Energy Losses

In this paper, the dependence of photoluminescence quenching on ion energy losses by ion irradiation is investigated. It is found that for Si nanocrystals, the quenching rate of photoluminescence under ion irradiation strongly depends on the energy loss rate of ions. It was also found that light ions may be considered more effective for PL quenching than heavy ions for the reason that the displacements introduced by heavy ions from defect complexes, which are not centers of non-radiative recombination.