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1974•Radiation EffectsRequires access

The electrical activity of neutron damage centres in silicon diodes

D. V. Morgan, P. Ashburn

Open publisher page 5 citations

Abstract

In this paper, a study is made of radiation damage in silicon p n diodes produced by low dose neutron irradiation, and a comparison is made with the results of earlier work on carbon irradiated diodes. Particular emphasis is placed on the effects of damage on the I/V characteristics of the diodes. The physical properties of the damage are studied by means of thermally stimulated current measurements, and further information is obtained from the temperature dependence of the reverse leakage.

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What this paper is about

In this paper, a study is made of radiation damage in silicon p n diodes produced by low dose neutron irradiation, and a comparison is made with the results of earlier work on carbon irradiated diodes. Particular emphasis is placed on the effects of damage on the I/V characteristics of the diodes. The physical properties of the damage are studied by means of thermally stimulated current measurements, and further information is obtained from the temperature dependence of the reverse leakage.

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OpenAlex reports 5 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

In this paper, a study is made of radiation damage in silicon p n diodes produced by low dose neutron irradiation, and a comparison is made with the results of earlier work on carbon irradiated diodes. Particular emphasis is placed on the effects of damage on the I/V characteristics of the diodes. The physical properties of the damage are studied by means of thermally stimulated current measurements, and further information is obtained from the temperature dependence of the reverse leakage.

Key concepts: Diode, Silicon, Materials science, Radiation damage, PIN diode, Optoelectronics, Irradiation, Reverse leakage current

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