2008•Unpublished venueRequires access

2GHz CMOS noise cancellation VCO

Amit B. Bansal, Chun-Huat Heng, Yuan-Jin Zheng

Open publisher page 9 citations

Abstract

A 2 GHz CMOS VCO, employing noise cancellation to eliminate flicker noise up-conversion, has been fabricated in 0.35 mum CMOS. An overall phase noise reduction of 10 dB has been measured with the proposed technique, and phase noise of -121.6 dBc/Hz@500 kHz offset has been achieved. The VCO core consumes 2.8 mA under 2.4V supply and occupies an area of 0.7 mmtimes0.8 mm. The proposed VCO measured FOM of -186 dBc/Hz.

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What this paper is about

A 2 GHz CMOS VCO, employing noise cancellation to eliminate flicker noise up-conversion, has been fabricated in 0.35 mum CMOS. An overall phase noise reduction of 10 dB has been measured with the proposed technique, and phase noise of -121.6 dBc/Hz@500 kHz offset has been achieved. The VCO core consumes 2.8 mA under 2.4V supply and occupies an area of 0.7 mmtimes0.8 mm. The proposed VCO measured FOM of -186 dBc/Hz.

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Available abstract

A 2 GHz CMOS VCO, employing noise cancellation to eliminate flicker noise up-conversion, has been fabricated in 0.35 mum CMOS. An overall phase noise reduction of 10 dB has been measured with the proposed technique, and phase noise of -121.6 dBc/Hz@500 kHz offset has been achieved. The VCO core consumes 2.8 mA under 2.4V supply and occupies an area of 0.7 mmtimes0.8 mm. The proposed VCO measured FOM of -186 dBc/Hz.

Key concepts: dBc, Phase noise, Voltage-controlled oscillator, CMOS, Flicker noise, Offset (computer science), Electrical engineering, Materials science

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