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1990•IEEE Electron Device LettersRequires access

An AlGaAs/GaAs heterostructure-emitter bipolar transistor

Xiaoxi Wu, Y.Q. Wang, L. F. Luo, Edward S. Yang

Open publisher page 41 citations

Abstract

An AlGaAs/GaAs heterostructure-emitter bipolar transistor using separate carrier injection and confinement is discussed. A common-emitter current gain of 28 with BV/sub CEO/=15 V was obtained at a base doping level of 1*10/sup 19//cm/sup 3/. No spacer layer was inserted in the structure. This transistor combines the merits of homojunction transistors and regular heterostructure bipolar transistors (HBTs) and is simple to fabricate.>

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What this paper is about

An AlGaAs/GaAs heterostructure-emitter bipolar transistor using separate carrier injection and confinement is discussed. A common-emitter current gain of 28 with BV/sub CEO/=15 V was obtained at a base doping level of 1*10/sup 19//cm/sup 3/. No spacer layer was inserted in the structure. This transistor combines the merits of homojunction transistors and regular heterostructure bipolar transistors (HBTs) and is simple to fabricate.>

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OpenAlex reports 41 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

An AlGaAs/GaAs heterostructure-emitter bipolar transistor using separate carrier injection and confinement is discussed. A common-emitter current gain of 28 with BV/sub CEO/=15 V was obtained at a base doping level of 1*10/sup 19//cm/sup 3/. No spacer layer was inserted in the structure. This transistor combines the merits of homojunction transistors and regular heterostructure bipolar transistors (HBTs) and is simple to fabricate.>

Key concepts: Homojunction, Bipolar junction transistor, Heterojunction, Common emitter, Heterostructure-emitter bipolar transistor, Optoelectronics, Heterojunction bipolar transistor, Materials science

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