2000•Journal of Applied PhysicsRequires access

Tunnel magnetoresistance versus micromagnetism in magnetic tunnel junctions

C. Tiuşan, Théodoros Dimopoulos, K. Ounadjela, M. Hehn, Holger Berg, V. Da Costa, Y. Henry

Abstract

The impact of the micromagnetic configuration within the ferromagnetic layers on transport properties of hard/soft magnetic tunnel junctions is presented. An artificial ferrimagnetic (AFi) trilayer structure is used as a magnetically hard subsystem. Fluctuations in magnetization in the AFi affect the resistance of the tunnel junctions and are fully reflected in the shape and amplitude of the tunnel magnetoresistance signal.

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Key concepts: Micromagnetics, Ferrimagnetism, Magnetoresistance, Tunnel magnetoresistance, Condensed matter physics, Ferromagnetism, Materials science, Quantum tunnelling