2012Review of Scientific InstrumentsRequires access

Revisiting plasma hysteresis with an electronically compensated Langmuir probe

P. K. Srivastava, S. K. Singh, L. M. Awasthi, S. K. Mattoo

Open publisher page 8 citations

Abstract

The measurement of electron temperature in plasma by Langmuir probes, using ramped bias voltage, is seriously affected by the capacitive current of capacitance of the cable between the probe tip and data acquisition system. In earlier works a dummy cable was used to balance the capacitive currents. Under these conditions, the measured capacitive current was kept less than a few mA. Such probes are suitable for measurements in plasma where measured ion saturation current is of the order of hundreds of mA. This paper reports that controlled balancing of capacitive current can be minimized to less than 20 μA, allowing plasma measurements to be done with ion saturation current of the order of hundreds of μA. The electron temperature measurement made by using probe compensation technique becomes independent of sweep frequency. A correction of ≤45% is observed in measured electron temperature values when compared with uncompensated probe. This also enhances accuracy in the measurement of fluctuation in electron temperature as δT(pk-pk) changes by ~30%. The developed technique with swept rate ≤100 kHz is found accurate enough to measure both the electron temperature and its fluctuating counterpart. This shows its usefulness in measuring accurately the temperature fluctuations because of electron temperature gradient in large volume plasma device plasma with frequency ordering ≤50 kHz.

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What this paper is about

The measurement of electron temperature in plasma by Langmuir probes, using ramped bias voltage, is seriously affected by the capacitive current of capacitance of the cable between the probe tip and data acquisition system. In earlier works a dummy cable was used to balance the capacitive currents. Under these conditions, the measured capacitive current was kept less than a few mA. Such probes are suitable for measurements in plasma where measured ion saturation current is of the order of hundreds of mA. This paper reports that controlled balancing of capacitive current can be minimized to less than 20 μA, allowing plasma measurements to be done with ion saturation current of the order of hundreds of μA. The electron temperature measurement made by using probe compensation technique becomes independent of sweep frequency. A correction of ≤45% is observed in measured electron temperature values when compared with uncompensated probe. This also enhances accuracy in the measurement of fluctuation in electron temperature as δT(pk-pk) changes by ~30%. The developed technique with swept rate ≤100 kHz is found accurate enough to measure both the electron temperature and its fluctuating counterpart. This shows its usefulness in measuring accurately the temperature fluctuations because of electron temperature gradient in large volume plasma device plasma with frequency ordering ≤50 kHz.

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Available abstract

The measurement of electron temperature in plasma by Langmuir probes, using ramped bias voltage, is seriously affected by the capacitive current of capacitance of the cable between the probe tip and data acquisition system. In earlier works a dummy cable was used to balance the capacitive currents. Under these conditions, the measured capacitive current was kept less than a few mA. Such probes are suitable for measurements in plasma where measured ion saturation current is of the order of hundreds of mA. This paper reports that controlled balancing of capacitive current can be minimized to less than 20 μA, allowing plasma measurements to be done with ion saturation current of the order of hundreds of μA. The electron temperature measurement made by using probe compensation technique becomes independent of sweep frequency. A correction of ≤45% is observed in measured electron temperature values when compared with uncompensated probe. This also enhances accuracy in the measurement of fluctuation in electron temperature as δT(pk-pk) changes by ~30%. The developed technique with swept rate ≤100 kHz is found accurate enough to measure both the electron temperature and its fluctuating counterpart. This shows its usefulness in measuring accurately the temperature fluctuations because of electron temperature gradient in large volume plasma device plasma with frequency ordering ≤50 kHz.

Key concepts: Langmuir probe, Electron temperature, Capacitive sensing, Plasma, Plasma diagnostics, Materials science, Plasma parameters, Saturation current

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