An analytic potential and threshold voltage model for short-channel symmetric double-gate MOSFET

This paper presents a simple analytical model for potential and threshold voltage for short-channel lightly doped symmetric double-gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET). We have derived an expression for potential by solving 2D Poisson's equation including both fixed and the mobile-charge term with Boltzmann's approximation. Potential is plotted with respect to channel width and gate voltage. Then equation for minimum potential is obtained and used to formulate the threshold voltage. The threshold voltage roll-off and DIBL are performed. The model is valid from weak to strong inversion of operation.