1991•Japanese Journal of Applied PhysicsRequires access
GaAs Taper Etching by Mixture Gas Reactive Ion Etching System
Makoto Hirano, Kazuyoshi Asai Kazuyoshi Asai
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Abstract
A novel technique is proposed for taper-etching GaAs. The angle of the sidewalls formed by undercutting GaAs can be controlled by adjusting the ratio of He to CCl2F2 used for reactive ion etching (RIE). A negative undercut with a taper angle of 80 degrees is formed with He gas content of 95%. Etched surfaces are analyzed by micro-Auger spectroscopy. The detailed etching conditions for forming taper shapes are described and the mechanism of such formation is also discussed.