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2013•IEEE Latin America TransactionsOpen access

Numerical Analysis of Si and GaAs Solar Cells Exposed to Space Radiation

Marcelo Ángel Cappelletti, Guillermo Casas, Ariel Pablo Cédola, E. L. Peltzer y Blancá

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Abstract

In this paper, we present a study about Si and GaAs space solar cells by means of numerical simulations. We have investigated the variations of the short-circuit current, open circuit voltage and maximum power point, before and after the devices were irradiated with 10 MeV protons and fluences between 109and 1013p+/cm2. The simulation results allow to obtain the optimum solar cell with specific requirements for space applications.

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What this paper is about

In this paper, we present a study about Si and GaAs space solar cells by means of numerical simulations. We have investigated the variations of the short-circuit current, open circuit voltage and maximum power point, before and after the devices were irradiated with 10 MeV protons and fluences between 109and 1013p+/cm2. The simulation results allow to obtain the optimum solar cell with specific requirements for space applications.

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Available abstract

In this paper, we present a study about Si and GaAs space solar cells by means of numerical simulations. We have investigated the variations of the short-circuit current, open circuit voltage and maximum power point, before and after the devices were irradiated with 10 MeV protons and fluences between 109and 1013p+/cm2. The simulation results allow to obtain the optimum solar cell with specific requirements for space applications.

Key concepts: Space (punctuation), Physics, Topology (electrical circuits), Electrical engineering, Computer science, Engineering, Operating system

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