1987•Physica ScriptaRequires access

Optical Properties of Heavily Doped Semiconductor Layers

S. U. Campisano, E. Rimini, Alessandro Borghesi, G. Guizzetti, L. Nosenzo, A. Stella

Abstract

It is shown that a coupled study of the structures due to interband transitions and of the free carrier response in heavily doped semiconductors gives a combined picture of crystal order, free carrier concentration, effective mass and relaxation time. As, P and B ion implanted and laser annealed Si crystals are investigated. Reflectance measurements on samples with free carrier concentrations in the range 10 19 -10 21 cm -3 are reported and discussed.

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Key concepts: Free carrier, Semiconductor, Doping, Materials science, Relaxation (psychology), Condensed matter physics, Crystal (programming language), Effective mass (spring–mass system)