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2012•Applied Physics LettersOpen access

Shot noise suppression in InGaAs/InGaAsP quantum channels

Yoshitaka Nishihara, Shuji Nakamura, Kensuke Kobayashi, Teruo Ono, Makoto Kohda, Junsaku Nitta

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Abstract

We have measured the shot noise in a quantum point contact (QPC) fabricated by using InGaAs/InGaAsP heterostructure, whose conductance can be electrically tuned by the gate voltages. The reduced shot noise is observed when the QPC conductance equals to N(2e2/h) (N = 4, 5, and 6), which is the direct experimental evidence of the coherent quantized channel formation in the QPC. The deviation of the observed Fano factor from the theory is explained by the electron heating effect generated at the QPC.

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What this paper is about

We have measured the shot noise in a quantum point contact (QPC) fabricated by using InGaAs/InGaAsP heterostructure, whose conductance can be electrically tuned by the gate voltages. The reduced shot noise is observed when the QPC conductance equals to N(2e2/h) (N = 4, 5, and 6), which is the direct experimental evidence of the coherent quantized channel formation in the QPC. The deviation of the observed Fano factor from the theory is explained by the electron heating effect generated at the QPC.

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Available abstract

We have measured the shot noise in a quantum point contact (QPC) fabricated by using InGaAs/InGaAsP heterostructure, whose conductance can be electrically tuned by the gate voltages. The reduced shot noise is observed when the QPC conductance equals to N(2e2/h) (N = 4, 5, and 6), which is the direct experimental evidence of the coherent quantized channel formation in the QPC. The deviation of the observed Fano factor from the theory is explained by the electron heating effect generated at the QPC.

Key concepts: Fano factor, Quantum point contact, Shot noise, Conductance, Gallium arsenide, Heterojunction, Condensed matter physics, Optoelectronics

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