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A new analytical and statistical-oriented approach for the two-dimensional threshold analysis of short-channel MOSFETs

Massimo Conti, Claudio Turchetti, Guido Masetti

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Key concepts: Threshold voltage, Subthreshold conduction, MOSFET, Drain-induced barrier lowering, Gaussian, Short-channel effect, Channel (broadcasting), Channel length modulation

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A new analytical and statistical-oriented approach for the two-dimensional threshold analysis of short-channel MOSFETs — Research Paper | ScholarLens