Resonant tunneling through a HgTe/Hg1−xCdxTe double-barrier, single-quantum-well heterostructure

Resonant tunneling has been demonstrated through a double-barrier, single-quantum-well HgTe/Hg1−xCdxTe heterostructure for the first time. Negative differential resistance is observable at room temperature, exhibiting a 1.4:1 peak-to-valley tunnel current ratio. The observation provides direct evidence for the existence of the proposed intrinsic interface state.