Emel Tasyürek, Stephanie A. Claussen, Jonathan E. Roth, David A. B. Miller
Abstract
The scattering time of electrons from the direct Γ to the indirect L valley in the conduction band of germanium/silicon-germanium quantum wells is measured to be ∼250 fs. Carrier field screening is also observed and modeled.
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The scattering time of electrons from the direct Γ to the indirect L valley in the conduction band of germanium/silicon-germanium quantum wells is measured to be ∼250 fs. Carrier field screening is also observed and modeled.
Key concepts: Germanium, Silicon, Silicon-germanium, Scattering, Materials science, Electron, Quantum well, Conduction band