Fourier Transform Infrared Spectroscopy of Low-k Dielectric Material on Patterned Wafers
Jeffrey Lam, Hao Tan, Maggie Yamin Huang, Fan Zhang, Handong Sun, Zexiang Shen, Zhihong Mai
Abstract
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Jeffrey Lam, Hao Tan, Maggie Yamin Huang, Fan Zhang, Handong Sun, Zexiang Shen, Zhihong Mai
Abstract
Open-access reader
With many of research on Fourier transform IR (FTIR) on low-k materials, our experiments extended the FTIR spectroscopy application to characterization and analysis of the low-k dielectric thin film properties on patterned wafers. FTIR spectra on low-k materials were successfully captured under three sampling modes: reflection, attenuated total reflectance (ATR), and mapping mode. ATR mode is more suitable for CH x band than reflection mode due to its higher sensitivity in this range. FTIR spectroscopy signal analysis on mixed structures (metal and low-k dielectric material) on patterned wafers was also investigated with mapping mode. Based on our investigation, FTIR can be used for low-k material studies on patterned wafer.
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With many of research on Fourier transform IR (FTIR) on low-k materials, our experiments extended the FTIR spectroscopy application to characterization and analysis of the low-k dielectric thin film properties on patterned wafers. FTIR spectra on low-k materials were successfully captured under three sampling modes: reflection, attenuated total reflectance (ATR), and mapping mode. ATR mode is more suitable for CH x band than reflection mode due to its higher sensitivity in this range. FTIR spectroscopy signal analysis on mixed structures (metal and low-k dielectric material) on patterned wafers was also investigated with mapping mode. Based on our investigation, FTIR can be used for low-k material studies on patterned wafer.
Key concepts: Fourier transform infrared spectroscopy, Wafer, Attenuated total reflection, Fourier transform spectroscopy, Materials science, Dielectric, Analytical Chemistry (journal), Spectroscopy